Your threshold voltage is low compared with silicon MOSFETs. How do I handle dV/dt immunity?
The ratios of CGD to CGS is quite good in holding the device off under a dV/dt condition. This is a capacitive divider, so care must be taken in the gate drive to have a low resistance turn off and good layout such that inductance is minimized in the turn off loop to keep the effective impedance low. The magnitude will depend on dV/dt and voltage. It should also be noted that eGaN devices have a very low temperature coefficient for their threshold voltage. This gives the user added safety margin despite the lower threshold voltages at room temperature.
