What\s the circuit model for a gate driver and power MOSFET?
The figure below shows the simplified model, including the parasitic components that influence high-speed switching, gate-to-source capacitance (CGS), the gate-to-drain capacitance (CGD), and drain-to-source capacitance (CDS). Values of the source inductance (LS) and drain inductance (LD) depend on the MOSFET package. The other parasitic component is RG, the resistance associated with the gate signal distribution within the MOSFET that affects switching times.