What materials can be etched by the available dry/wet etching techniques?
Dry etching is performed in our Oxford Plasma LAB 80 plus inductively coupled plasma (ICP) etcher. Currently this is configured to use the following gases: O2, Ar, SiCl4, Cl2, CHF3 & SF6, and recipes are well established to etch GaN, GaAs, Si, SiO2, Si3N4 & many thin metallic films. In addition we have broad experience with a wide variety of wet chemical etchants which may be required, e.g. HF-based solutions for etching novel photonic fibres.
