What is the smallest feature I can pattern?
The electron beam lithography system is routinely used to pattern structures with dimensions down to ~50nm in PMMA (a common electron-beam resist). Smaller features are possible, but depend crucially on the type of resist used, the substrate material and additional processing requirements (e.g. etching of underlying films or ‘lift-off’ of deposited films). Achieving feature sizes <50nm will involve considerably more effort and more time should be allowed for process development.
