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What is Chemical Vapor Deposition?

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What is Chemical Vapor Deposition?

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Chemical vapor deposition (CVD) is a process employed to deposit thin films in microelectronics and other industries. It is easily distinguished from physical vapor deposition (PVD) and molecular beam epitaxy (MBE), two processes in which the gas phase species are directly deposited as the growing film. An example is physical vapor deposition of Al by evaporation, a widely employed process where Al is heated and evaporated and the gas phase Al atoms directly deposit into the growing Al thin film.

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Chemical Vapor Deposition (CVD) is a process by which thin layers of various materials are formed on a substrate from a gaseous mixture of reactive chemicals. The deposited materials are then patterned to create the individual elements that make up the integrated circuit.

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CVD is a method of forming dense structural part of coating using the decomposition of high vapor pressure gases (precursors). Thermally activated to deposit material, usually by heating the substrate to a temperature higher than that of the reactive gas mixture Endothermic, requiring heat for the reaction Most CVD reactors are designed and used to deposit thin films either for the microelectronic industry or for use in surface treatment CVD processes have limitation in terms of the thickness of deposition. Introduction of metal powder will increase thickness.

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Chemical vapor deposition (CVD) is a chemical process that uses a chamber of reactive gas to synthesize high-purity, high-performance solid materials, such as electronics components. Certain components of integrated circuits require electronics made from the materials polysilicon, silicon dioxide, and silicon nitride. An example of a chemical vapor deposition process is the synthesis of polycrystalline silicon from silane (SiH4), using this reaction: SiH4 -> Si + 2H2 In the silane reaction, the medium would either be pure silane gas, or silane with 70-80% nitrogen. Using a temperature between 600 and 650 °C (1100 – 1200 °F), and pressure between 25 and 150 Pa — less than a thousandth of an atmosphere — pure silicon can be deposited at a rate of between 10 and 20 nm per minute, perfect for many circuit board components, whose thickness is measured in microns. In general, temperatures inside a chemical vapor temperature deposition machine are high, while pressures are very low. The lowes

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