What improvements have been made to the EX-Q sensor over previous CyberOptics Semiconductor and HAMA sensors?
• The laser stripe of the EX-Q was reduced to 0.05 mm. This enables the EX-Q to provide consistent detection performance (apparent wafer thickness) that is less dependent on wafer characteristics (coating, edge geometry, thickness, etc.) – similar to through-beam performance. • A 3° vertical tilt has been incorporated into the laser and detector optics of the EX-Q to avoid FOUP back reflections. This results in significantly reduced susceptibility to stray reflections. Back to the Top I want fail-safe wafer detection. Do I need to switch to a through-beam wafer mapping solution to achieve this type of performance? No. The EX-Q wafer mapping sensor provides consistent and accurate performance, independent of wafer characteristics and it does not require gain adjustment. The EX-Q has a new laser optical design that reduced the laser stripe thickness. As a result EX-Q sensors report consistent and accurate apparent wafer thickness that is comparable to through-beam. Contact technical supp
Related Questions
- I used the alignment card to properly align my CyberOptics Semiconductor wafer mapping sensor and now I seem to have more problems with mapping than before. What is going on?
- What improvements have been made to the EX-Q sensor over previous CyberOptics Semiconductor and HAMA sensors?
- I have an old HAMA sensor. Does CyberOptics Semiconductor support these old wafer mapping sensors?
