What has Honeywell done that allows SOI technology to provide reliable solutions that work to 225°C?
We have evaluated the gate oxide and interlevel metal dielectric for high temperature integrity and reliability. Our testing shows that our structures will withstand 225°C temperatures reliably for 5 years or longer. The metalization has been evaluated, and we are using a 0.5mA per square micron current density in the metal lines which yields 5 year operation at 225°C before the first three sigma failures are expected due to electromigration. This compares to the typical 4mA to 5mA per square micron design guideline for military ICs. We have also modified transistor thresholds so that the devices continue to work normally in the enhancement mode above 300°C.
