What design formats will MOSIS accept?
MOSIS accepts designs in CIF or GDSII format. For more information, see MOSIS Layout Conventions for CIF and GDSII. 2.0 What layout does MOSIS recommend for bonding pads? The minimum recommended pad layout for wire bonding is a 90 µm x 90 µm (3.5 mils x 3.5 mils) glass cut box over a 100 µm x 100 µm (3.9 mils x 3.9 mils) top metal box. For more information, see Bonding Pad Layout and Placement. 3.0 Does using a guard ring affect pad spacing? Use of a guard ring does not effect pad spacing. Our general recommendation is that pads are 100 µm x 100 µm with a pitch of 170 µm (allows for pad edge to pad edge spacing of 70 µms). Smaller pads and tighter pitch are possible but not without considering the exact location of the package cavity pins, angle of wire to the pins and length of the wires. 4.0 How do I draw a thick oxide transistor? For processes that provide a “thick oxide” option (for operation at voltages above the standard process voltage), the MOSIS Thick_Active layer selects whic