What are FRAM’s key advantages over EEPROM?
1) Speed. FRAM has fast write times. Beyond all the other operations, the actual write time to an FRAM memory cell is less than 50ns. That is approximately 1000x faster than EEPROM. Additionally, unlike EEPROM where you must have two steps to write data: a write command, followed by a read/verify command; FRAM’s write memory function happens in the same process as read memory. There is only one memory access command, one step for either reading or writing. So in effect, all the time associated with an EEPROM write transaction is effectively eliminated in an FRAM-based smart IC. 2) Low Power. Writes to the FRAM cell occur at low voltage and very little current is needed to change the data. With EEPROM high voltages are needed. FRAM uses very low power – 1.5v compared to 10-14v for EEPROM. FRAM’s low voltage translates into low power usage and enables more functionality at faster transactions speeds. 3) Data Reliability. Because only a small amount of energy is required, all the necessar
