I am accustomed to calculating an effective channel length (L_effective) according to the formula: L_effective = L_drawn + XL – (2 * LD) How can I derive this quantity from the MOSIS on-line SPICE BSIM3 parameters, which do not include LD?
There are many ways to define, calculate, estimate, and measure effective MOS channel dimensions, some biased more toward physical properties of the devices and some more toward goodness of fit of a particular model. The formula above is valid for SPICE Level 3 and similar models, but is not applicable for BSIM3v3 because BSIM3v3 does not have an LD parameter, where LD represents the portion of the source-drain active area that lies under the gate, The simple BSIM3v3 analog of LD is LINT, which we do extract and optimize. The formula for effective channel length with MOSIS BSIM3v3 parameters is L_effective = L_drawn – (2 * LINT) (For this discussion we have simplified this expression somewhat. BSIM3v3 permits several more terms. Note that XL, which is not a BSIM3 parameter, but which is recognized by some modeling tools as a mask and process geometric bias factor (see FAQ on XL, XW), does not appear in the equation because it is incorporated into LINT during parameter extraction and op
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