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How large of an electric field can a FRAM device withstand?

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How large of an electric field can a FRAM device withstand?

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The FRAM memory cell operates by applying a switched voltage to sense and restore the data state. The ferroelectric film PZT is about 70nm thick. If the device is placed in a 50 kV field at 1 cm, it is not possible to produce more than 1V across the ferroelectric film. As a practical matter, FRAM devices are impervious to external electric fields.

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