How is a magneto-inductive (MI) sensor different from a magneto-resistive (MR) sensor?
Much like a fluxgate, a magneto-resistive sensor requires a much more complex interference circuit than PNI’s magneto-inductive sensor. Power draw also becomes an issue, especially when the system is intended to operate for extended periods on battery power. A typical MR sensor implementation requires 3 volts minimum with a current draw of 6.2 mA minimum as well as 600 mA current pulses for reset at least once per second during use, and once per reading minimum. A typical PNI magneto-inductive circuit operates at 3 volts standard with 2.2 volts available and 1.8 volts possible. With a current draw as low as 0.5 mA, the PNI magneto-inductive sensor solution is well suited for ultra low power applications. Another important difference between magneto-resistive and magneto-inductive sensor technology is their dynamic range. PNI’s MI sensors have a dynamic range that is approximately 100 times greater than that of the magneto-resistive sensors. This increased range allows for the ability t
