How does Multibeam mitigate the proximity effect?
During e-beam lithography some electrons inevitably scatter within the resist or substrate, dispersing up to tens of microns from the primary beam location and partially exposing resist this is called proximity effect. To correct for this, most e-beam systems implement proximity effect correction (PEC). Multibeam accomplishes PEC by adjusting flash time. By controlling flash time the MEBIC corrects for additional resist doses arising from proximity effects.
