GaAs PIN Power Diodes?
A now-defunct company called International Semiconductor (ISSM) and its subsiduary, GAD Semiconductor, developed power GaAs PIN diodes. These are not Schottky diodes. This information was extracted from ISSM’s 10-K form, filed with the the Securities and Exchange Commission (who would’ve thought of the SEC database as a good place to research diodes?!) : • The vast majority of semiconductor devices are made of silicon, whose physical properties limit high temperature and high frequency operations at elevated temperatures. Although gallium arsenide semiconductor devices offer significantly better operating parameters, past attempts to form an actual high-voltage gallium arsenide positive-intrinsic- negative (“P-i-N”) structure, which would have properties superior to a silicon structure, have failed due to complications in technology, irreproducibility of results and defects that led to low breakdown voltages. GAD acquired, from the Ramot University Authority for Applied Research and In
