Does the GaN have a body diode? If so how does it compare with the Silicon MOSFETs with respect to forward voltage drop and reverse recovery characteristics?
In the reverse direction, EPC’s eGaN FETs’ act similarly to the reverse diode in a silicon power MOSFET. However, only majority carriers are involved in GaN device conduction so there is zero reverse recovery. The forward voltage of the internal diode is is higher than the diode forward drop in a Silicon based FET, hence the dead time or the diode conduction time should be minimized to get maximum efficiency. For further detail of the operation in this mode, please refer to “Fundamentals of Gallium Nitride Transistors”, at – http://epc-co.com/epc/documents/product-training/Appnote_GaNfundamentals.pdf.
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