Recent wafer electrical test results for Hewlett-Packard AMOS14TB runs do not contain values for N-well sheet resistance or silicide-blocked polysilicon. Why?
Space limitations have prevented MOSIS from fabricating the process monitor containing those test structures. The vendor’s nominal values are: Rs, N_well 715 ohms/square Rs, non-silicided poly 90 ohms/square 4.0 Is it possible to obtain parametric data mapped to specific sites on the wafers from a given MOSIS run? Vendors do not generally provide this information. In special cases MOSIS may release to approved customers wafer-mapped data for selected parameters from the MOSIS standard nine-sites-per-wafer database. 5.0 How can I obtain process characteristic data, such as temperature coefficients of resistance, that is not posted with the electrical test data for each MOSIS run? Information about the fabrication processes available through MOSIS can be found on our web site. Additional process parameters may be available by special request to registered MOSIS customers. Send a message to support@mosis.com specifying in reasonable detail what you need and why you need it. Include your M
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